Negative absorption coefficient of a weak electromagnetic wave caused by electrons confined in rectangular quantum wires in the presence of laser radiation

http://repository.vnu.edu.vn/handle/VNU_123/32541

Analytic expressions for the absorption coefficient (ACF) of a weak electromagnetic wave (EMW) caused by electrons confined in rectangular quantum wires (RQWs) in the presence of laser radiation are calculated using the quantum kinetic equation for electrons in the case of electron-optical phonon scattering. 

The dependence of the ACF of a weak EMW on the intensity E 01 and the frequency Ω1 of the external laser radiation, the intensity E 02 and the frequency Ω2 of the weak EMW, the temperature T of the system and the size L (L x and L y) of the RQWs is obtained. 
The results are numerically calculated and discussed for GaAs/GaAsAl RQWs. 
The numerical results show that the ACF of a weak EMW in RQWs can have negative values. 
Thus, in the presence of laser radiation, under proper conditions, a weak EMW is increased. 
This is different from the similar problem in bulk semiconductors and from the case without laser radiation


Title: Negative absorption coefficient of a weak electromagnetic wave caused by electrons confined in rectangular quantum wires in the presence of laser radiation
Authors: Bau, Nguyen Quang
Nhan, Nguyen Thi Thanh
Nhan, Nguyen Vu
Keywords: Absorption coefficient
Electron-phonon interaction
Laser radiation
Rectangular quantum wires
Issue Date: 2014
Publisher: Journal of the Korean Physical Society
Citation: Scopus
Abstract: Analytic expressions for the absorption coefficient (ACF) of a weak electromagnetic wave (EMW) caused by electrons confined in rectangular quantum wires (RQWs) in the presence of laser radiation are calculated using the quantum kinetic equation for electrons in the case of electron-optical phonon scattering. The dependence of the ACF of a weak EMW on the intensity E 01 and the frequency Ω1 of the external laser radiation, the intensity E 02 and the frequency Ω2 of the weak EMW, the temperature T of the system and the size L (L x and L y) of the RQWs is obtained. The results are numerically calculated and discussed for GaAs/GaAsAl RQWs. The numerical results show that the ACF of a weak EMW in RQWs can have negative values. Thus, in the presence of laser radiation, under proper conditions, a weak EMW is increased. This is different from the similar problem in bulk semiconductors and from the case without laser radiation
Description: Journal of the Korean Physical Society, Volume 64, Issue 4, February 2014, Pages 572-578
Journal of the Korean Physical Society
URI: http://link.springer.com/article/10.3938%2Fjkps.64.572
http://repository.vnu.edu.vn/handle/VNU_123/32541
ISSN: 03744884
Appears in Collections:Bài báo của ĐHQGHN trong Scopus

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